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Uncovered Potential of Co2MnGa in Spintronics

26. Oktober 2020 | Verfasser: KJLC Innovate

The Kurt J. Lesker Company continues to support the researchers who are advancing the science and technology of spintronics around the world. Co2MnGa, a Heusler material, has been attractive to scientists as a novel magnetic conducting material on which spintronic structures like magnetic tunnel junctions can be built. Recent work, published in Applied Physics Letter titled "Perpendicular magnetic anisotropy in Co2MnGa and its anomalous Hall Effect" by Dr. Ludbrook, Dr. Ruck and Dr. Granville from Victoria University of Wellington, New Zealand, has identified characteristics of thin film Co2MnGa that are necessary for realizing magnetic tunnel junctions.

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Schlagwörter:
INNOVATE Systeme Vakuumwissenschaft Depositionsverfahren



Thermal Evaporation Source Selection

12. Oktober 2020 | Verfasser: KJLC Blog

Selecting the correct thermal evaporation source can sometimes prove difficult. There are several factors that will need to be considered when doing so.

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Schlagwörter:
Vakuumwissenschaft Depositionsmaterialien



Comparison of Hafnium Dioxide & Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

1. Oktober 2020 | Verfasser: KJLC Innovate

Dr. Zhigang Xiao, Professor of Electrical Engineering at Alabama A&M University, in collaboration with the ALD group in the Kurt J. Lesker Company recently developed the plasma-enhanced atomic layer deposition process and grow high dielectric constant (K) oxide for the application of electronic materials. They grew nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD) and fabricated complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Miniaturization in modern semiconductor industry requires thin film deposition to have atomic level control and the deposited film to be conformal and pinhole-free. As MOSFETs are scaled down to nanometer sizes, the tunneling currents through the gate dielectrics (the gate leakage current) has become a major concern in today’s fabrication of integrated circuits (ICs). High-K dielectric metal oxide could be a solution to the problem of the gate leakage current. The plasma-enhanced atomic layer deposition of HfO2 and ZrO2 thin films meets the requirement and can produce conformal and ultra-thin films with precise thickness control at the atomic layer level. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

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Schlagwörter:
INNOVATE Systeme Vakuumwissenschaft Depositionsverfahren



     
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