ALD-150LX™
Designed for Advanced Research & Development Applications

Die Kurt J. Lesker Company® (KJLC®) ALD150LX™ ist ein Atomschichtdepositionssystem (ALD), das speziell für Anwendungen in der fortgeschrittenen Forschung und Entwicklung (R&D) entwickelt wurde. Innovative ALD150LX design features, like our Patented Precursor Focusing Technique™ and advancements such as our Patent Pending Ultrahigh Purity (UHP) Process Capability provide unparalleled flexibility and performance. With an emphasis on enabling and supporting innovative, cutting edge technology at the R&D level, the ALD150LX serves not only as a stand-alone platform, but provides connectivity with additional process and analysis modules in a cluster tool configuration.

ALD150LX cluster tool connectivity eliminates unwanted atmosphere exposure between critical process and analysis steps to protect sensitive surfaces, layers and their interfaces. This connectivity includes the integration of additional ALD and analysis modules, as well as other KJLC thin film deposition technologies for multi-technique process and analysis capability and support that are second-to-none in the industry. Combined quality, flexibility and performance, as well as multi-technique process and analysis capability make the ALD150LX an innovative, best-in-class design.

ALD Ressourcen

Atomic Layer Deposition (ALD) - General, Technical, & Process Information

ALD-150LX™ Datasheet

 

Prozesskammer

The ALD150LX process chamber can be configured for purely thermal or plasma-enhanced ALD. A combination of metal and differentially pumped elastomer seals prevent atmospheric components (i.e., N₂, O₂ and H₂O) from entering the reaction zone where the substrate is located, thereby promoting a UHP process environment. In particular, UHP conditions reduce the levels of background oxygen impurities to limit exposures before, during and after film growth for high-quality non-oxide based materials, as well as their interfaces. Oxygen impurities are also a source of parasitic CVD during oxide film growth. Our unique perpendicular flow design enables isolated, uniform precursor delivery, and promotes increased precursor utilization as well as longer mean times between service intervals. Zur Vermeidung unerwünschter Materialanhaftungen und Partikelbildung in den Förderkanälen stehen vier separate Kammereinlässe (ohne Plasma) für die Vorläuferisolierung zur Verfügung. So können beispielsweise separate Einlässe verwendet werden, um metallorganische Vorläufer und Reaktionspartner zu isolieren, um Ablagerungen in Förderleitungen und Ventilen zu verhindern.

• Plasmaunterstützte ALD (PEALD) Konfiguration optional möglich
• Combination of metal and differentially pumped elastomer seals enabling UHP process conditions
• Fully laminar flow, and fully inert-gas swept dead spaces keep reactor clean and reduce outgassing and virtual leaks
• Analytische Anschlüsse (70° Einfallswinkel) für die in-situ Ellipsometrie (Ellipsometer optional)
• Four separate independently-heated inlet lines for precursor delivery to prevent unwanted buildup in delivery channels
• Unabhängige Substratheizstufe und Außenkammergehäuse für exzellente Temperaturregelung und Gleichmäßigkeit
• 304L-Edelstahlkonstruktion
• Zugängliches, wartungsarmes Design

Unsere patentierte Vorläufer-Fokussierung Technology™ (PFT™) kombiniert eine inaktive Vorhanggasbarriere mit einer zentralen Vorläuferzufuhr und -pumpung, um Wechselwirkungen mit den Seitenwänden der Prozesskammer zu minimieren und Vorläufer von Kammeröffnungen fernzuhalten, um die Ausnutzung der Vorläufer und die Wartungsintervalle zu verbessern. Analytical ports for ellipsometer integration are a standard feature on the ALD150LX (ellipsometer optional). Die Substrate (bis zu einem Durchmesser von 150 mm) werden durch eine horizontale Verladestation eingeführt. Im Inneren wird ein vertikaler Bolzenhubmechanismus verwendet, um den Transfer abzuschließen, indem Substrate direkt auf die Oberfläche der Substratheizstufe gepickt und platziert werden.

Vorläuferlieferung

The base ALD150LX system includes two heated, single-source vapor draw modules with two separate chamber inlets (to avoid unwanted buildup in delivery line components), that operate in dynamic or static exposure modes. Für die gesamte Bandbreite der derzeit verfügbaren Lieferoptionen für Vorläufer finden Sie weitere Informationen auf der Registerkarte Optionen.

Heizung

The ALD150LX employs superior heating and temperature control that complements our unique UHP and PFT designs by further enhancing overall system performance. In particular, temperature uniformity and control helps to prevent unwanted precursor vapor condensation or deposition, and subsequent vaporization resulting in parasitic effects that reduce film quality and compromise chamber cleanliness.

Upper temperature limits for heated system components are as follows:

• Substratheizstufe 600°C
• Kammer- und Vorläufer-Förderleitungen 250°C
• Vorläufer und Druckventile 200°C
• Aufheizen der Versorgungsleitung bis zu 250°C
• Bis zu 200°C Ventilerhitzung
• Redundant overtemperature thermocouples for all heated zones to minimize thermal runaway; software interlocks

Unser einzigartiges Heizungsdesign kombiniert mit unabhängigen Heizzonen für Vorläufer, Förderventile und -leitungen, Prozesskammer (mehrere Zonen), Substratheizung sowie Foreline-Komponenten bieten eine beispiellose Temperaturregelung und Gleichmäßigkeit der beheizten Systemkomponenten.

 

Plasmaoption

The ALD150LX plasma option is a fully integrated package that incorporates a high-performance, remote inductively coupled plasma (ICP) source design with up to eight plasma gas lines/channels. The use of expert vacuum design, including ultra high vacuum (UHV) type metal and differentially-pumped elastomer seals prevent atmospheric components (i.e., N₂, O₂ and H₂O) from entering the ICP source, thereby promoting a UHP process environment. In particular, UHP conditions reduce the levels of background oxygen impurities to limit exposures before, during and after film growth for high-quality non-oxide based materials, as well as their interfaces. Oxygen impurities are also a source of parasitic CVD during oxide film growth. Typische Plasmagase sind Sauerstoff, Stickstoff und Wasserstoff. Ein alternativer Bypasskanal ist verfügbar, um den kontinuierlichen Gasstrom während der PEALD-Verarbeitung aufrechtzuerhalten, so dass der Gasfluss optional gestartet und gestoppt werden kann. Our advanced plasma source design is complimented by our state-of-the-art eKLipse software and controls package.

Die Option Basisplasma beinhaltet die folgenden Komponenten:

• ICP source equipped with metal and differentially pumped elastomer seals enabling UHP process conditions
• Zylindrisches dielektrisches Plasmarohr mit schraubenförmiger induktiver Spulengeometrie
• 1 kW Netzteil, das mit der Frequenz 13,56 MHz arbeitet.
• Zwei Plasmagaskanäle
• Selbsttragendes, abnehmbares, selbstabgleichendes Netzwerk
• Kompaktes, modulares Design für einfache Wartung

Weitere optionale Plasma-Funktionen sind:

• Six additional plasma gas channels
• Pumpenspülverteiler für die Vorbereitung von Gasleitungen
• Gaskompatibilität speicherprogrammierbare Steuerung (SPS)

Ein optionaler Verteiler ist für die Vorbereitung der Gasleitung (d. h. Pumpen und Spülen) vor dem Laden erhältlich. Dieser Pumpenspülverteiler bietet eine integrierte Kapazität für die Vorbereitung von Gasleitungen zur Erzielung einer optimalen Gasreinheit. Zur Vermeidung der Vermischung von inkompatiblen Gasen (z. B. H₂ und O₂) ist auch eine gaskompatible speicherprogrammierbare Steuerung (SPS) erhältlich.

Optionen für die Lieferung von Vorprodukten

With up to twelve precursor sources that utilize four separate chamber inlets (not including plasma), the ALD150LX provides extreme process flexibility. Es ist eine Vielzahl von Lieferoptionen für Gas-, Flüssig- und Festphasenvorläufermodule erhältlich, darunter Dampfabzug, Durchfluss und gepulste Gaszufuhr. Eine vollständig integrierte Ozonversorgungsoption ist ebenfalls erhältlich. Bitte kontaktieren Sie uns für weitere Informationen über unsere Ozonoption.

For delivery options that require heating, the ALD150LX employs superior heating and temperature control that complements our unique UHP and PFT designs by further enhancing overall system performance. In particular, temperature uniformity and control helps to prevent unwanted precursor vapor condensation or deposition, and subsequent vaporization resulting in parasitic effects that reduce film quality and compromise chamber cleanliness.

Precursor exposure modes include dynamic, static and Variable Residence Mode. Dynamic and static modes are standard features; Variable Residence Mode is optional. Please contact us for more information regarding our Variable Residence Mode option. The modular, scalable ALD150LX design accommodates a variety of different configurations including future expansion and upgrades.

Gepulste Gaszufuhr

Zu den gepulsten Gasoptionen gehört unser Abgabemodul Source™ (PGS™), das speziell für die präzise, genaue und schnelle Dosierung toxischer Gase (z. B. WF₆, HCl, NH₃, H₂S, etc.) entwickelt wurde. The KJLC unique PGS design utilizes a fixed charge volume (or reservoir) for precursor dosing that eliminates the need for a mass flow controller for precise, accurate delivery. To accurately, precisely, and reproducibly control the amount of precursor being delivered, high-speed ALD valve timing as well as reservoir pressure are tightly controlled through our eKLipse software and controls package.

• Designed specifically for precise, accurate high-speed dosing of toxic or reactive gases (e.g., WF₆, HCl, NH₃, H₂S, etc.)
• Keine Massendurchflussregler mehr erforderlich
• Beinhaltet einen separaten Kanal zum Pumpen und Spülen der Komponenten der Eingangsleitung

Film Sense In Situ Ellipsometer Integration

In fact, the first Film Sense FS-1 in-situ testing was performed on a Kurt J. Lesker ALD150LX reactor in 2014. The FS-1 has since been integrated on multiple Lesker ALD reactors, and has been used to characterize a wide variety of thin films including: Al₂O₃, TiO₂, HfO₂, and TiN.

The ALD150LX was designed from the ground up for advanced R&D and features remote plasma as well as in-situellipsometry as a primary means of real time process monitoring and control during ALD. Patented Precursor Focusing Technology™(PFT™) prevents unwanted film deposition on sensitive surfaces inside the reactor including the analytical port windows used for light transmission during in-situ ellipsometry. The layout of the plasma-enhanced ALD (PEALD) reactor makes installation and operation of the compact FS-1 unit simple and easy.

The Film Sense vision "to create easy-to-use and affordable ellipsometers" is especially relevant for in-situ applications. The Film Sense FS-1 realizes this vision by providing the power of Multi-Wavelength Ellipsometry, at an affordable price and compact size that is ideal for in-situ measurements. The FS-1 can provide real time thickness data with exceptional precision, which can be indispensable for the efficient development of new ALD processes. In the plot below, the "steps" in the data are direct observations of the thickness changes on the sample throughout the ALD cycles: the thickness increases and saturates as the precursor is introduced (trimethyl aluminum in this case), and then decreases as the film is oxidized (thermally by H₂O in this case).

"Overall performance, affordability and ease of use has made the FS-1 a workhorse for our ALD process as well as equipment development efforts. The next generation FS-1EX provides a combination of higher beam intensity and wider spectral range improving both precision and accuracy. For metallic thin films such as TiN, Pt and Ru, two additional IR wavelengths enhance the ability to monitor film thickness and resistivity in-situ during growth. This enhanced performance helps us to streamline development efforts by effectively understanding the impact of different process conditions on film quality in real-time."

Dr. G. Bruce Rayner, Principal Scientist Atomic Layer Deposition
Kurt J. Lesker Company

Film Sense In Situ Ellipsometer integrated on a Kurt J. Lesker ALD Chamber

Laufzeit: 1:37

The ALD-150LE™ and ALD-150LX™ are now easily integrated with a glove box. The process chamber is strategically positioned in the glovebox to provide the user with easy access to load and unload their substrate.

Kurt J Lesker is able to offer a wide array of standard and custom glovebox suites, from a standard 4 port or 6 port arrangement, to custom lengths and depths.

Glovebox Optionen

Neben den Gloveboxen und Systemadapterboxen kann folgendes Zubehör mitgeliefert werden:

• Schleuderanlagen
• Heiße Platten
• UV-Ozonhärtung
• Regenerierbares Lösungsmittel-Reinigungssystem
• Weiteres Zubehör auf Anfrage

Glovebox Spezifikationen